MMBT5551LT1G IGBT Power Module 600mA 160V BJT Bipolar Transistors

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QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED

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Brand Name : ON

Model Number : MMBT5551LT1G

Place of Origin : ON

MOQ : 3000

Price : Can discuss

Payment Terms : T/T

Supply Ability : 10000

Delivery Time : 5-8 working days

Packaging Details : Carton packaging

Manufacturer : onsemi

Product Category : Bipolar Transistors - BJT

Mounting Style : SMD/SMT

Package / Case : SOT-23-3

Transistor Polarity : NPN

Configuration : Single

Collector- Emitter Voltage VCEO Max : 160 V

Collector- Base Voltage VCBO : 180 V

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Manufacturer:	onsemi
Product Category:	Bipolar Transistors - BJT
RoHS:	Details
Mounting Style:	SMD/SMT
Package / Case:	SOT-23-3
Transistor Polarity:	NPN
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	160 V
Collector- Base Voltage VCBO:	180 V
Emitter- Base Voltage VEBO:	6 V
Collector-Emitter Saturation Voltage:	200 mV
Maximum DC Collector Current:	600 mA
Pd - Power Dissipation:	225 mW
Gain Bandwidth Product fT:	-
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Series:	MMBT5551L
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Continuous Collector Current:	0.6 A
DC Collector/Base Gain hfe Min:	80
DC Current Gain hFE Max:	250
Height:	0.94 mm
Length:	2.9 mm
Product Type:	BJTs - Bipolar Transistors
Factory Pack Quantity	3000
Subcategory:	Transistors
Technology:	Si
Width:	1.3 mm
Unit Weight:	0.000282 oz

MMBT5551LT1G IGBT Power Module